Title :
Impact of scaling on electrostatics of Germanium-channel MOSFET — analytical study
Author :
Batail, E. ; Monfray, S. ; Pouydebasque, A. ; Ghibaudo, G. ; Skotnicki, Thomas
Author_Institution :
STMicroelectronics, Crolles, France
Abstract :
The electrostatics of germanium-channel MOSFETs is often mentioned as an issue for Ge integration in future technology nodes. In this paper we present two original analytical models for Ge MOSFET electrostatics, developed for bulk and Ge-on-insulator (GeOI) architectures. Using these new models, we show that ultrathin GeOI devices present equivalent threshold voltage control as silicon-on-insulator (SOI) devices.
Keywords :
MOSFET; electrostatics; elemental semiconductors; germanium; semiconductor-insulator boundaries; Ge; Ge MOSFET electrostatics; Ge-on-insulator architecture; germanium-channel MOSFET; scaling; threshold voltage control; ultrathin GeOI device; Analytical models; Doping; Electrostatic analysis; Germanium; MOSFET circuits; Poisson equations; Semiconductor process modeling; Silicon on insulator technology; Threshold voltage; Voltage control;
Conference_Titel :
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-2071-1
DOI :
10.1109/SNW.2008.5418479
