Quantum capacitance of MIS structures based on diluted magnetic semiconductors

Author

Kliros, George S.

Author_Institution

Dept. of Aeronaut. Sci., Hellenic Air-Force Acad., Dekeleia AFB, Greece

fYear

2009

fDate

19-22 Dec. 2009

Firstpage

382

Lastpage

385

Abstract

Quantum capacitance has an important role in nanoscale device modelling. In the present paper, we investigate the quantum magneto-capacitance of metal-insulator-semiconductor (MIS) structures based on diluted magnetic semiconductors (DMS) in the presence of Rashba spin-orbit interaction (SOI). Typical beating patterns with well defined node-positions in the oscillating quantum capacitance are observed. A simple relation that predicts the positions of nodes in the beating patterns is obtained. The interplay between the giant Zeeman splitting (including s-d exchange interaction) and the Rashba SOI, is discussed.

Keywords

MIS structures; exchange interactions (electron); semimagnetic semiconductors; spin-orbit interactions; MIS structures; Rashba spin-orbit interaction; diluted magnetic semiconductors; giant Zeeman splitting; metal-insulator-semiconductor structures; nanoscale device modelling; node-positions; quantum magneto-capacitance; typical beating patterns; Electrons; Elementary particle exchange interactions; Magnetic confinement; Magnetic fields; Magnetic semiconductors; Magnetoelectronics; Metal-insulator structures; Microelectronics; Nanoscale devices; Quantum capacitance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics (ICM), 2009 International Conference on

Conference_Location

Marrakech

Print_ISBN

978-1-4244-5814-1

Type

conf

DOI

10.1109/ICM.2009.5418604

Filename

5418604