Title :
Amplitude of RTS noise in MOSFETs
Author :
Pavelka, Jan ; Sikula, Josef ; Tacano, Munecazu ; Toita, Masato
Author_Institution :
Brno Univ. of Technol., Brno, Czech Republic
Abstract :
Low frequency noise of NMOS and PMOS field effect transistors was measured in wide temperature range as a function of applied electric field intensity in longitudinal and perpendicular direction and the influence of sample geometry on 1/f noise and RTS noise was examined for various gate lengths. Relative amplitude of RTS noise given by number of carriers under the gate and its dependence on channel and gate bias was analyzed.
Keywords :
1/f noise; MOSFET; burst noise; semiconductor device noise; 1/f noise; MOSFET; NMOS field effect transistors; PMOS field effect transistors; applied electric field intensity; burst noise; gate lengths; low frequency noise; random telegraph signal noise; Electric variables measurement; FETs; Frequency measurement; Length measurement; Low-frequency noise; MOS devices; MOSFETs; Noise level; Noise measurement; Temperature measurement; Burst noise; MOSFETs; semiconductor device noise;
Conference_Titel :
Microelectronics (ICM), 2009 International Conference on
Conference_Location :
Marrakech
Print_ISBN :
978-1-4244-5814-1
DOI :
10.1109/ICM.2009.5418614
