Title :
On-chip temperature sensor with high tolerance for process and temperature variation
Author_Institution :
Semicond. Technol. Dev. E&TS, IBM Japan, Shiga, Japan
Abstract :
A reliable temperature sensor circuit that is robust against wafer or chip process and sensing temperature variation is introduced. The circuit includes a reference voltage generator and a constant current bias voltage generator in order to compensate for process and sensing temperature variations. This method eliminates post-production adjustments by circuits such as fuses or non-volatile memory devices. It reduces adjustment test costs and silicon area for these devices, their test control circuits and the interface circuits. Temperature measurement variation of less than 0.6°C by the proposed circuit with a simple low-power structure was verified. The circuit is implemented for a refresh cycle control in 1.5 times of the PAD space on a low-power pseudo-SRAM type DRAM product with a 0.175-μm CMOS bulk process.
Keywords :
CMOS memory circuits; DRAM chips; low-power electronics; reference circuits; temperature measurement; temperature sensors; 0.175 micron; CMOS bulk process; DRAM; PAD space; constant current bias voltage generator; low-power structure; on-chip temperature sensor; process variation; pseudo-SRAM; reference voltage generator; refresh cycle control; sensing temperature variations; temperature variation; Atherosclerosis; Circuit testing; Costs; Fuses; Nonvolatile memory; Robustness; Silicon; Temperature measurement; Temperature sensors; Voltage;
Conference_Titel :
Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
Print_ISBN :
0-7803-8834-8
DOI :
10.1109/ISCAS.2005.1464765