Title :
A 7.4 to 8.4 GHz high efficiency PHEMT three-stage power amplifier
Author :
Chu, S.L.G. ; Platzker, A. ; Borkowski, M. ; Mallavarpu, R. ; Snow, M. ; Bowlby, A. ; Teeter, D. ; Kazior, T. ; Alavi, K.
Author_Institution :
Adv. Device Center, Raytheon Co., Andover, MA, USA
Abstract :
This paper describes the design, fabrication, and performance of a 7.4 GHz to 8.4 GHz 3-stage PHEMT power amplifies. To the best of our knowledge, this amplifier has achieved the highest efficiency, power, and gain ever for a three-stage power amplifier at X-band. At a drain voltage of 6 volts, measured power added efficiency was between 50% to 60% with a CW power output of 35 dBm and an associated gain of 24 dB. The amplifier was stable over all measured biases and all drive levels.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; gallium arsenide; integrated circuit design; integrated circuit measurement; 24 dB; 50 to 60 percent; 6 V; 7.4 to 8.4 GHz; CW power output; GaAs; PHEMT three-stage power amplifier; X-band; drain voltage; drive levels; measured biases; power added efficiency; FETs; Fabrication; Gain; Gallium arsenide; High power amplifiers; PHEMTs; Power amplifiers; Power measurement; Radiofrequency amplifiers; Voltage;
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-5687-X
DOI :
10.1109/MWSYM.2000.863513
