• DocumentCode
    354308
  • Title

    14-W GaN-based microwave power amplifiers

  • Author

    Wu, Y.-F. ; Wapolnek, D. ; Ibbetson, J. ; Parikh, P. ; Keller, B.P. ; Mishra, U.K.

  • Author_Institution
    Nitres Inc., Goleta, CA, USA
  • Volume
    2
  • fYear
    2000
  • fDate
    11-16 June 2000
  • Firstpage
    963
  • Abstract
    High-power GaN-based flip-chip ICs are demonstrated using AlGaN/GaN High-Electron-Mobility-Transistors (HEMTs) as the active devices and AlN as the circuit substrates. The circuits achieved 6-10 GHz bandwidth, 9 dB linear gain and 14.1-W output power. This power level is the highest for a GaN-based amplifier to date, and is a factor of 4-7 higher than conventional GaAs-HEMT-based amplifiers using the same size of output devices.
  • Keywords
    HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; flip-chip devices; gallium compounds; wide band gap semiconductors; 14 W; 6 to 10 GHz; 9 dB; GaN; GaN HEMT; flip-chip IC; microwave power amplifier; Aluminum gallium nitride; Bandwidth; Circuits; Gallium nitride; HEMTs; High power amplifiers; MODFETs; Microwave amplifiers; Microwave devices; Power amplifiers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest. 2000 IEEE MTT-S International
  • Conference_Location
    Boston, MA, USA
  • ISSN
    0149-645X
  • Print_ISBN
    0-7803-5687-X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2000.863517
  • Filename
    863517
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=354308