Impact of 1/f noise in Ka-band InGaP/GaAs HBT frequency sources

Author

Heins, M.S. ; Hein, M.S. ; Juneja, T. ; Caruth, D. ; Hattendorf, M. ; Feng, Ming

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA

Volume

2

fYear

2000

fDate

11-16 June 2000

Firstpage

1209

Abstract

A measurement system was constructed to evaluate the 1/f noise of InGaP/GaAs HBTs. Our standard InGaP/GaAs HBTs have 1/f noise that is at least 10 dB less than reported AlGaAs devices and comparable to other InGaP devices. Experiments and simulations highlight the contributions of both device noise and circuit elements to the resultant oscillator phase noise in our particular Ka-band VCO circuits at 100 kHz offset.

Keywords

1/f noise; III-V semiconductors; MMIC oscillators; bipolar MIMIC; bipolar analogue integrated circuits; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; integrated circuit noise; millimetre wave generation; millimetre wave oscillators; phase noise; voltage-controlled oscillators; 1/f noise; HBT frequency sources; III-V semiconductors; InGaP-GaAs; Ka-band; VCO circuits; circuit elements; measurement system; mm-wave oscillators; oscillator phase noise; Circuit noise; Current density; Frequency measurement; Gallium arsenide; Heterojunction bipolar transistors; Low-frequency noise; Noise figure; Noise measurement; Oscillators; Phase noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest. 2000 IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-7803-5687-X

Type

conf

DOI

10.1109/MWSYM.2000.863576

Filename

863576