Title :
Room-temperature carrier transport in high-performance short-channel Silicon nanowire MOSFETs
Author :
Majumdar, Angshul ; Bangsaruntip, Sarunya ; Cohen, Guy M. ; Gignac, Lynne ; Guillorn, M. ; Frank, Martin M. ; Sleight, J.W. ; Antoniadis, Dimitri A.
Author_Institution :
Res. Div., T.J. Watson Res. Center, IBM, Yorktown Heights, NY, USA
Abstract :
Room-temperature carrier transport in Si nanowire (NW) MOSFETs with gate lengths and diameters down to 25 and 8 nm, respectively, is analyzed. It is shown that in Si NWs, holes exhibit channel injection and thermal velocities, as high as the highest obtained for uniaxially strained planar Si-channel electrons, likely due to combination of strain and confinement.
Keywords :
MOSFET; elemental semiconductors; hole mobility; nanowires; semiconductor quantum wires; silicon; Si; channel injection; gate lengths; high-performance short-channel silicon nanowire MOSFET; room-temperature carrier transport; size 25 nm; size 8 nm; temperature 293 K to 298 K; thermal velocity; uniaxially strained planar silicon-channel electrons; Charge carrier processes; Data mining; Field effect transistors; Logic gates; Scattering; Silicon;
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2012.6479003
