Title :
Dependence of electrical field and photoresponse on multiplication region thickness for GaN APDs
Author :
Jingjing Wanyan ; Zhaoqi Sun ; Shiwei Shi ; Mingzai Wu ; Gang He ; Guang Li
Author_Institution :
Sch. of Phys. & Mater. Sci., Anhui Univ., Hefei, China
Abstract :
A visible-blind ultraviolet GaN back-illuminated avalanche photodiode with separate absorption and multiplication regions are simulated based on drift-diffusion equation. The current-voltage characteristics of the device have been numerically obtained. The result is in good agreement with the experimental data. It was found that the thickness of the multiplication layer is important to improve the electrical field profiles and spectral response characteristics. A peak responsivity of 106.5mA/W is achieved at 364 nm corresponding to the cutoff wavelength of GaN.
Keywords :
III-V semiconductors; avalanche photodiodes; electrical conductivity; gallium compounds; numerical analysis; photodetectors; ultraviolet detectors; wide band gap semiconductors; APD; GaN; absorption region; current-voltage characteristics; cutoff wavelength; drift-diffusion equation; electrical field dependence; electrical field profiles; multiplication layer thickness; multiplication region thickness; photoresponse; spectral response characteristics; visible-blind ultraviolet back-illuminated avalanche photodiode; Absorption; Avalanche photodiodes; Charge carrier processes; Electric fields; Gallium nitride; Mathematical model; Physics;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on
Conference_Location :
Vancouver, BC
Print_ISBN :
978-1-4673-6309-9
DOI :
10.1109/NUSOD.2013.6633108
