Title :
Physics-based GaN HEMT transport and charge model: Experimental verification and performance projection
Author :
Radhakrishna, Ujwal ; Lan Wei ; Dong-Seup Lee ; Palacios, T. ; Antoniadis, D.
Author_Institution :
Microsyst. Technol. Labs., Massachusetts Inst. of Technol., Cambridge, MA, USA
Abstract :
A physics-based compact transport and charge model for GaN HEMTs has been developed. The model includes effects such as self-heating, non-linear access region behavior, electron-phonon interaction etc. The model is validated against fabricated devices and is used to evaluate fT improvements in short channel devices. The model is also a suitable base for GaN FET circuit simulation compact models.
Keywords :
III-V semiconductors; electron-phonon interactions; gallium compounds; high electron mobility transistors; semiconductor device models; wide band gap semiconductors; FET circuit simulation compact models; GaN; electron-phonon interaction; nonlinear access region behavior; physics-based HEMT transport model; physics-based compact transport-charge model; self-heating; short channel devices; Capacitance; Gallium nitride; HEMTs; Integrated circuit modeling; Logic gates; Performance evaluation; Scattering parameters;
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2012.6479038
