Title :
Design considerations for large-aperture single-mode oxide-confined VCSELs
Author :
Kalosha, V.P. ; Ledentsov, Nikolay N. ; Bimberg, Dieter
Author_Institution :
Inst. for Solid State Phys., Tech. Univ. Berlin, Berlin, Germany
Abstract :
Three-dimensional cold-cavity optical modes of oxide-confined AlGaAs/GaAs VCSELs at 850 nm were simulated taking into account the material dispersion to study dependencies of the lasing modal content upon the thickness of the aperture, its position with respect to the mode standing wave and the separation from the cavity. Positioning the thin aperture layer in the mode nodes to decrease the diffraction at low-index oxidized areas or utilizing the thick aperture and thick low Al-content layers above the aperture to promote the lateral leakage of the transverse higher-order modes allow single-mode laser operation to extend to the aperture diameters as large as 10 μm.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; laser transitions; optical dispersion; surface emitting lasers; AlGaAs-GaAs; design consideration; large-aperture single-mode oxide-confined VCSEL; laser transitions; lasing modal content; low-index oxidized areas; material dispersion; mode standing wave; three-dimensional cold-cavity optical modes; transverse higher-order modes; wavelength 850 nm; Apertures; Diffraction; Dispersion; Laser modes; Solids; Vertical cavity surface emitting lasers;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on
Conference_Location :
Vancouver, BC
Print_ISBN :
978-1-4673-6309-9
DOI :
10.1109/NUSOD.2013.6633139