Title :
Influences of indium fluctuation to the carrier transport, auger recombination, and efficiency droop
Author :
Yuh-Renn Wu ; Shu-ting Yeh ; Da-Wei Lin ; Chi-kang Li ; Hao-Chung Kuo ; Speck, James S.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
Our recent preliminary studies show that the nanoscale indium fluctuation in InGaN quantum well LED plays an important key role in carrier transport, radiative recombination, Auger, and droop effects. In this paper, we further examine the influence indium fluctuation for different degree of fluctuation, auger coefficients, and non-radiative lifetime. The influence of different AlGaN electronic blocking layer will be discussed in this paper. The commercial grade LED will be used for comparison to examine the model accuracy.
Keywords :
Auger effect; III-V semiconductors; aluminium compounds; carrier mobility; electron-hole recombination; fluctuations; gallium compounds; indium compounds; light emitting diodes; quantum well devices; semiconductor quantum wells; wide band gap semiconductors; Auger recombination; InGaN-AlGaN; carrier transport; efficiency droop effect; electronic blocking layer; nanoscale indium fluctuation; nonradiative lifetime; quantum well LED; radiative recombination; Charge carrier density; Computational modeling; Educational institutions; Indium; Light emitting diodes; Numerical models; Radiative recombination;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on
Conference_Location :
Vancouver, BC
Print_ISBN :
978-1-4673-6309-9
DOI :
10.1109/NUSOD.2013.6633149
