Performance comparison of III-V MOSFETs with source filter for electron energy

We evaluated the performances of two high-energy-electrons filtering MOSFET designs, the superlattice source-extension (SL) MOSFET and the p⁺/n⁺ source-junction (p⁺n⁺ source) MOSFET, using the sp³d⁵s* full-band tight-binding model, coupled with a non-equilibrium Green´s function quantum transport simulator in the ballistic regime. III-V semicoductor heterojunctions made up of GaAs and In₅₃Ga₄₇As are investigated and the optimizing parameters such as the length of the barrier and well regions for the SL-MOSFETs and the doping concentrations and the length of n⁺ region for the p⁺n⁺ source MOSFETs are varied to understand their effects on the device performance parameters. More detailed interactions between electrons are considered in the present full-band simulations. Our optimized SL-MOSFET and p⁺n⁺ source MOSFET achieve I_ON = 0.81 and 0.60 mA/μm, SS = 20.9 and 23.1mV/dec@V_DS=0.6V, respectively.