Title :
New and critical aspects of 1/f noise variability in advanced CMOS SoC technologies
Author :
Srinivasan, P. ; Dey, Shuvashis
Author_Institution :
Adv. CMOS Technol. Dev., Texas Instrum., Dallas, TX, USA
Abstract :
New and critical aspects of flicker (1/f) noise variability dependence to (i) process halo doping (ii) voltage bias and (iii) oxide thickness are presented. In addition, the effect of narrow width on noise variability and non-1/f conditions due to ultra-small geometries are also studied. A new compact model which captures the noise variability under all the above conditions has been developed and integrated into SPICE. The proposed model provides realistic design margins leading to improved noise yield in low power analog/RF circuits for System-on-Chip (SoC) applications.
Keywords :
1/f noise; CMOS digital integrated circuits; SPICE; doping; flicker noise; integrated circuit noise; radiofrequency integrated circuits; system-on-chip; 1/f noise variability; 1/f noise variability dependence; CMOS SoC technologies; RF circuits; SPICE; flicker noise variability dependence; halo doping process; low power analog circuits; non1/f conditions; oxide thickness; realistic design margins; system-on-chip applications; ultrasmall geometries; voltage bias; Area measurement; Geometry; Logic gates; Mathematical model; Noise; Noise measurement; System-on-chip;
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2012.6479073
