Title :
Exceeding Nernst limit (59mV/pH): CMOS-based pH sensor for autonomous applications
Author :
Parizi, K.B. ; Yeh, Alexander J. ; Poon, Ada S. Y. ; Wong, H.-S.
Author_Institution :
Stanford Univ., Stanford, CA, USA
Abstract :
A highly sensitive field-effect sensor immune to environmental potential fluctuation is proposed. The sensor circuit consists of two sensors each with a charge sensing field effect transistor (FET) and an extended sensing gate (SG). By enlarging the sensing gate of an extended gate ISFET, a remarkable sensitivity of 130mV/pH is achieved, exceeding the conventional Nernst limit of 59mV/pH. The proposed differential sensing circuit consists of a pair of matching n-channel and p-channel ion sensitive sensors connected in parallel and biased at a matched transconductance bias point. Potential fluctuations in the electrolyte appear as common mode signal to the differential pair and are cancelled by the matched transistors. This novel differential measurement technique eliminates the need for a true reference electrode such as the bulky Ag/AgCl reference electrode and enables the use of the sensor for autonomous and implantable applications.
Keywords :
CMOS integrated circuits; chemical sensors; electrolytes; field effect transistor circuits; ion sensitive field effect transistors; thermomagnetic effects; CMOS-based pH sensor; ISFET; autonomous application; common mode signal; differential measurement technique; electrolyte; environmental potential fluctuation; exceeding Nernst limit; extended sensing gate; field effect sensor; field effect transistor; matched transconductance bias point; matched transistors; n-channel ion sensitive sensors; p- channel ion sensitive sensors; sensor circuit; Electrodes; Field effect transistors; Fluctuations; Logic gates; Noise; Sensitivity; Sensors;
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2012.6479098
