Title :
0.5 V, 3 6µW Gm-C Butterworth low pass filter in 0.18µm CMOS process
Author :
Harishchandra, Vasantha M. ; Laxminidhi, Tonse
Author_Institution :
Dept. of Electron. & Commun. Eng., NITK, Surathkal, India
Abstract :
This paper presents a low voltage, low power continuous-time (Gm-C) 4th order low pass Butterworth filter with a 3-dB bandwidth of 1MHz and capable of operating at supply voltage as low as 0.5V in 0.18 μm. The filter uses bulk-driven technique for achieving the necessary head-room. The simulation results show that the filter has a peak-to-peak signal swing of 1.2V (differential) for 1% THD and a dynamic range of 54 dB. The power consumed by the filter is 36μW when operating at a voltage of 0.5 V. The Figure of Merit (FOM) achieved by the filter is 0.05 fJ and is found to be lowest among the similar filters found in the literature.
Keywords :
Butterworth filters; CMOS integrated circuits; low-pass filters; CMOS process; FOM; Gm-C Butterworth low pass filter; THD; bandwidth 1 MHz; bulk-driven technique; figure of merit; gain 54 dB; low power continuous-time 4th order low pass Butterworth filter; low voltage continuous-time 4th order low pass Butterworth; power 36 muW; size 0.18 mum; voltage 0.5 V; voltage 1.2 V; Continuous-time; bulk-transconductance; low-pass filter; low-voltage; state-space;
Conference_Titel :
Quality Electronic Design (ASQED), 2012 4th Asia Symposium on
Conference_Location :
Penang
Print_ISBN :
978-1-4673-2687-2
DOI :
10.1109/ACQED.2012.6320480