Title :
A physical based analytic model of RRAM operation for circuit simulation
Author :
Huang, Pei-Yu ; Liu, X.Y. ; Li, W.H. ; Deng, Y.X. ; Chen, Bing ; Lu, Yang ; Gao, Bingzhao ; Zeng, Lang ; Wei, Kang Liang ; Du, Gang ; Zhang, Xiaobing ; Kang, J.F.
Author_Institution :
Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing, China
Abstract :
A physical based analytic model of metal oxide based RRAM cell under DC and pulse operation modes is presented. In this model, the transport behaviors of oxygen vacancies and oxygen ions, metal conductivity, electron hopping and heat conduction and the parasitic capacitance and resistance effects are covered. The developed analytic model is verified and calibrated by measured data. Furthermore, we implement the analytic model in a 2×2 RRAM array simulation and investigate the reliability of RRAM array for the first time.
Keywords :
circuit simulation; electrical conductivity; electron traps; heat conduction; integrated circuit reliability; oxygen; random-access storage; DC operation modes; RRAM array reliability; RRAM array simulation; RRAM operation; circuit simulation; developed analytic model; electron hopping; heat conduction; metal conductivity; metal oxide based RRAM cell; oxygen ions; oxygen vacancy; parasitic capacitance; physical based analytic model; pulse operation modes; resistance effects; transport behaviors; Analytical models; Arrays; Data models; Integrated circuit modeling; Mathematical model; Resistance; Switches;
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2012.6479110
