DocumentCode :
3544536
Title :
Self-aligned-gate GaN-HEMTs with heavily-doped n+-GaN ohmic contacts to 2DEG
Author :
Shinohara, K. ; Regan, D. ; Corrion, A. ; Brown, Dean ; Tang, Yuchen ; Wong, Johnson ; Candia, G. ; Schmitz, A. ; Fung, H. ; Kim, Sungho ; Micovic, M.
Author_Institution :
HRL Labs., LLC, Malibu, CA, USA
fYear :
2012
fDate :
10-13 Dec. 2012
Abstract :
We report record DC and RF performance obtained in deeply-scaled self-aligned-gate GaN-HEMTs with heavily-doped n+-GaN ohmic contacts to two-dimensional electron-gas (2DEG). High density-of-states of three-dimensional (3D) n+-GaN source near the gate mitigates “source-starvation,” resulting in a dramatic increase in a maximum drain current (Idmax) and a transconductance (gm). 20-nm-gate D-mode HEMTs with a 40-nm gate-source (and gate-drain) distance exhibited a record-low Ron of 0.23 Ω·mm, a record-high Idmax of >4 A/mm, and a broad gm curve of >1 S/mm over a wide range of Ids from 0.5 to 3.5 A/mm. Furthermore, 20-nm-gate E-mode HEMTs with an increased Lsw of 70 nm demonstrated a simultaneous fT/fmax of 342/518 GHz with an off-state breakdown voltage of 14V.
Keywords :
III-V semiconductors; electron gas; gallium compounds; high electron mobility transistors; ohmic contacts; wide band gap semiconductors; 2DEG; DC performance; E-mode HEMT; GaN; RF performance; density-of-state; drain current; frequency 342 GHz; frequency 518 GHz; gate-drain; heavily-doped n+-GaN ohmic contact; self-aligned-gate GaN-HEMT; size 20 nm; size 40 nm; source-starvation; transconductance; two-dimensional electron-gas; voltage 14 V; Cutoff frequency; Gallium nitride; HEMTs; Logic gates; MODFETs; Ohmic contacts; Resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0163-1918
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.2012.6479113
Filename :
6479113
Link To Document :
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