Substrate-emitting short-wavelength vertical-cavity lasers for cryogenic optical interconnects

Author

Akulova, Y.A. ; Ko, J. ; Coldren, L.A.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

1998

fDate

3-8 May 1998

Firstpage

371

Lastpage

372

Abstract

Summary form only given. We report on a substrate emitting 885-nm (77 K) vertical cavity lasers (VCL) optimized for operation at cryogenic temperature. Submilliampere threshold currents over a 77-300 K temperature range for 3.8-/spl mu/m-diameter devices and power conversion efficiencies >30% for larger devices at cryogenic temperatures are demonstrated. The investigated VCL structure is shown. The active region contains two 60-/spl Aring/ InGaAs-GaAs quantum wells (QWs).

Keywords

III-V semiconductors; cryogenics; gallium arsenide; indium compounds; laser cavity resonators; laser transitions; optical interconnections; quantum well lasers; substrates; surface emitting lasers; 3.8 mum; 30 percent; 77 K; 885 nm; InGaAs-GaAs; InGaAs-GaAs quantum well lasers; active region; cryogenic optical interconnects; cryogenic temperature; cryogenic temperatures; power conversion efficiencies; submilliampere threshold currents; substrate; substrate-emitting short-wavelength vertical-cavity lasers; temperature range; Apertures; Cryogenics; Electrodes; Indium tin oxide; Nearest neighbor searches; Optical interconnections; Oxidation; Temperature; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-339-0

Type

conf

DOI

10.1109/CLEO.1998.676323

Filename

676323