Saturation of semiconductor optical amplifiers due to amplified spontaneous emission

Author

Obermann, K. ; Liu, Tiegen ; Petermann, K. ; Girardin, F. ; Guekos, G.

Author_Institution

Inst. fur Hochfrequenztech., Tech. Univ. Berlin, Germany

fYear

1998

fDate

3-8 May 1998

Firstpage

379

Lastpage

380

Abstract

Summary form only given. We solved the nonlinear integral equation for the carrier density by the method of fixed-point iteration for different SOA lengths. We also investigated the reduction in the gain recovery time due to the saturation caused by ASE, which is important for both linear and nonlinear applications. The spontaneous carrier lifetime can be reduced by approximately a factor of 10 when sufficiently long SOAs are used.

Keywords

carrier density; carrier lifetime; optical saturation; semiconductor optical amplifiers; superradiance; amplified spontaneous emission; carrier density; fixed-point iteration; gain recovery time; linear application; nonlinear application; nonlinear integral equation; saturation; semiconductor optical amplifiers; spontaneous carrier lifetime; Charge carrier density; Electrons; Optical amplifiers; Optical saturation; Optical scattering; Semiconductor optical amplifiers; Spontaneous emission; Stimulated emission; Substrates; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-339-0

Type

conf

DOI

10.1109/CLEO.1998.676339

Filename

676339