• DocumentCode
    3545197
  • Title

    Measurements on mechanical properties of boron-doped silicon materials for micro inertia sensor

  • Author

    Liu, Haipeng ; Gao, Shiqiao ; Niu, Shaohua ; Jin, Lei

  • Author_Institution
    State Key Lab. of Explosion Sci. & Technol., Beijing Inst. of Technol., Beijing, China
  • fYear
    2009
  • fDate
    16-19 Aug. 2009
  • Abstract
    The capacitive structure of comb capacitive micromachined gyroscope is a kind of important structure. The mechanical properties of micro inertia sensor material had changed when the structures experienced high temperature boron diffusion, lithography and etching et.al. micromachined process. Therefore, it is necessary to measure the basic mechanical properties of boron-doped material in order to supply exact material parameters for design and fabrication of micro inertia sensor. With the rapid development of measurement technologies, the nano indentation technology had become an ideal method to obtain the mechanical properties of MEMS structures material accurately. We obtained the elastic modulus and hardness of heavy boron-doped silicon material using nano indenter. The experimental results showed that the elastic modulus and hardness of heavy boron-doped silicon material had increased comparing with the silicon material.
  • Keywords
    boron; diffusion; elastic moduli; elemental semiconductors; etching; hardness; lithography; microsensors; nanoindentation; silicon; Si:B; boron-doped silicon materials; capacitive structure; comb capacitive micromachined gyroscope; elastic modulus; etching; hardness; high temperature diffusion; lithography; mechanical properties; microinertia sensor; micromachined process; nanoindentation technology; Boron; Etching; Fabrication; Gyroscopes; Lithography; Mechanical factors; Mechanical sensors; Mechanical variables measurement; Silicon; Temperature sensors; comb capacitive structure; elastic modulus; hardness; heavy boron-doped silicon; nano indentation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Measurement & Instruments, 2009. ICEMI '09. 9th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-3863-1
  • Electronic_ISBN
    978-1-4244-3864-8
  • Type

    conf

  • DOI
    10.1109/ICEMI.2009.5274601
  • Filename
    5274601