p-type /spl delta/-doped InGaAs/GaAs quantum-well surface-emitting laser and high-speed data transmission beyond 10 Gbits/s

Author

Hatori, N. ; Mizutani, A. ; Nishiyama, N. ; Motomura, F. ; Koyama, F. ; Iga, K.

Author_Institution

Tokyo Inst. of Technol., Yokohama, Japan

fYear

1998

fDate

3-8 May 1998

Firstpage

447

Abstract

Summary form only given. We have demonstrated p-type 6-doped sub-mA InGaAs-GaAs quantum-well vertical-cavity surface-emitting lasers (VCSELs) for high-speed data transmission. We have performed a high-speed data transmission experiment through a 100-m-long fiber by using one of fabricated oxide confinement VCSELs with a potential modulation bandwidth >12 Gbit/s. The motive for this study is to show a new type of VCSEL for high-speed operation.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; optical transmitters; quantum well lasers; semiconductor doping; surface emitting lasers; 10 Gbit/s; 100 m; InGaAs-GaAs; VCSEL; VCSELs; high-speed data transmission; high-speed data transmission experiment; high-speed operation; oxide confinement VCSELs; p-type /spl delta/-doped InGaAs/GaAs quantum-well surface-emitting laser; p-type 6-doped sub-mA InGaAs-GaAs quantum-well vertical-cavity surface-emitting lasers; potential modulation bandwidth; Bandwidth; Data communication; Distributed Bragg reflectors; Etching; Gallium arsenide; Indium gallium arsenide; Quantum well lasers; Signal analysis; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-339-0

Type

conf

DOI

10.1109/CLEO.1998.676479

Filename

676479