Title :
p-type /spl delta/-doped InGaAs/GaAs quantum-well surface-emitting laser and high-speed data transmission beyond 10 Gbits/s
Author :
Hatori, N. ; Mizutani, A. ; Nishiyama, N. ; Motomura, F. ; Koyama, F. ; Iga, K.
Author_Institution :
Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
Summary form only given. We have demonstrated p-type 6-doped sub-mA InGaAs-GaAs quantum-well vertical-cavity surface-emitting lasers (VCSELs) for high-speed data transmission. We have performed a high-speed data transmission experiment through a 100-m-long fiber by using one of fabricated oxide confinement VCSELs with a potential modulation bandwidth >12 Gbit/s. The motive for this study is to show a new type of VCSEL for high-speed operation.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical transmitters; quantum well lasers; semiconductor doping; surface emitting lasers; 10 Gbit/s; 100 m; InGaAs-GaAs; VCSEL; VCSELs; high-speed data transmission; high-speed data transmission experiment; high-speed operation; oxide confinement VCSELs; p-type /spl delta/-doped InGaAs/GaAs quantum-well surface-emitting laser; p-type 6-doped sub-mA InGaAs-GaAs quantum-well vertical-cavity surface-emitting lasers; potential modulation bandwidth; Bandwidth; Data communication; Distributed Bragg reflectors; Etching; Gallium arsenide; Indium gallium arsenide; Quantum well lasers; Signal analysis; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-339-0
DOI :
10.1109/CLEO.1998.676479
