Title :
Realization of distributed Bragg reflector laser for polarization-independent wavelength-conversion applications
Author :
Gurib, S. ; Labourie, C. ; Gaumont-Goarin, E. ; Gaborit, F. ; Le Gourezigou, O. ; Jourdan, A. ; Soulage, G. ; Jacquet, Joel ; Laube, G.
Author_Institution :
Alcatel Alsthom Recherche, Marcoussis, France
Abstract :
Summary form only given. We have demonstrated the first polarization-insensitive tunable InGaAsP DBR laser for wavelength-conversion applications. Based an a nearly square bulk active stripe it shows a threshold current of 30 mA, a 7.5 nm tuning range, a 15 GHz relaxation frequency for 10 mW of output power, and less than 1 dB polarization.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; laser tuning; light polarisation; optical frequency conversion; semiconductor lasers; 10 mW; 30 mA; GHz relaxation frequency; InGaAsP; distributed Bragg reflector laser; nearly square bulk active stripe; nm tuning range; output power; polarization-independent wavelength-conversion applications; polarization-insensitive tunable InGaAsP DBR laser; threshold current; Distributed Bragg reflectors; Extinction ratio; Laser modes; Laser tuning; Optical waveguides; Optical wavelength conversion; Polarization; Power lasers; Semiconductor optical amplifiers; Tellurium;
Conference_Titel :
Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-443-2
