Theory and experiment on the amplified spontaneous emission from DFB lasers

Author

Minch, J. ; Chang, C.S. ; Fang, Wanliang ; Chuang, Shun L. ; Chen, Y.K. ; Tanbun-Ek, T.

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA

fYear

1996

fDate

2-7 June 1996

Firstpage

37

Abstract

Summary form only given. In the quest to improve distributed feedback lasers for telecommunication systems, it is critical to be able to characterize these lasers effectively. In this paper, we use out model for the amplified spontaneous emission from DFB lasers coupled with our model for the material gain of strained quantum well lasers to analyze data measured on a 1.55-/spl mu/m InGaAsP-InGaAsP strained quantum well DFB laser in an effort to systematically extract important laser parameters.

Keywords

III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser theory; laser transitions; optical transmitters; quantum well lasers; semiconductor device models; superradiance; /spl mu/m InGaAsP-InGaAsP strained quantum well DFB laser; 1.55 mum; DFB lasers; InGaAsP-InGaAsP; amplified spontaneous emission; distributed feedback lasers; laser parameters; material gain; strained quantum well lasers; telecommunication systems; Coupled mode analysis; Data analysis; Distributed feedback devices; Laser feedback; Laser modes; Laser theory; Optical coupling; Optical materials; Quantum well lasers; Spontaneous emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864326