Noncontact wafer doping maps measured with T-rays

Author

Mittleman, Daniel M. ; Nuss, M.C. ; Cunningham, Joseph J. ; Geva, Moti

Author_Institution

AT&T Bell Labs., Holmdel, NJ, USA

fYear

1996

fDate

2-7 June 1996

Firstpage

82

Lastpage

83

Abstract

Summary form only given. Recently, Hu and Nuss demonstrated an imaging system using THz transients generated by standard optoelectronic methods. We have used this system to measure spatial inhomogeneities in the doping density of epitaxial GaAs films. The absorption of THz radiation by doped semiconductors is a strong function of the conductivity, and as a result we are able to detect small variations in the level of doping with 250-/spl mu/m spatial resolution. Such information is not easily obtainable by any other method, and this demonstration could lead to improved quality control in the growth of doped semiconductor wafers.

Keywords

III-V semiconductors; electromagnetic wave absorption; epitaxial growth; gallium arsenide; optical films; semiconductor doping; semiconductor growth; semiconductor thin films; submillimetre wave measurement; /spl mu/m spatial resolution; GaAs; THz radiation absorption; THz transients; conductivity; doped semiconductor wafer growth; doped semiconductors; doping density; doping level; epitaxial GaAs films; imaging system; improved quality control; noncontact wafer doping maps; spatial inhomogeneities; standard optoelectronic methods; Absorption; Conductivity; Density measurement; Gallium arsenide; Lead compounds; Radiation detectors; Semiconductor device doping; Semiconductor films; Semiconductor radiation detectors; Spatial resolution;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864389