DocumentCode :
3546583
Title :
Identification of fatigue crack extension process in zero-tension cyclic stress test of polysilicon films
Author :
Le Huy, Vu ; Kamiya, Shoji ; Gaspar, Joao ; Paul, Oliver
Author_Institution :
Nagoya Inst. of Technol., Nagoya, Japan
fYear :
2012
fDate :
Jan. 29 2012-Feb. 2 2012
Firstpage :
440
Lastpage :
443
Abstract :
This paper presents evidence for a fatigue crack extension process in zero-tension cyclic stress test of polysilicon film specimens with notches. Initial cracks and their fatigue extension were found on the fracture surfaces observed in a scanning electron microscope. The fatigue crack extension process was quantitatively analyzed in detail using Paris´ law on the basis of the parameters evaluated from static and fatigue test data. The observed and estimated crack lengths are consistent with each other. The results suggest that the fatigue crack extend into the silicon itself.
Keywords :
elemental semiconductors; fatigue cracks; fatigue testing; scanning electron microscopy; semiconductor thin films; silicon; statistical testing; Paris law; Si; crack lengths; fatigue crack extension process; fracture surfaces; polysilicon films; scanning electron microscopy; static test data; zero-tension cyclic stress test; Equations; Fatigue; Mathematical model; Silicon; Stress; Surface cracks; Surface treatment;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2012 IEEE 25th International Conference on
Conference_Location :
Paris
ISSN :
1084-6999
Print_ISBN :
978-1-4673-0324-8
Type :
conf
DOI :
10.1109/MEMSYS.2012.6170168
Filename :
6170168
Link To Document :
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