Raman spectroscopy of semiconductor lasers

Author

Epperlein, P.W.

Author_Institution

IBM Res. Div., Zurich Res. Lab., Ruschlikon, Switzerland

fYear

1996

fDate

2-7 June 1996

Firstpage

108

Lastpage

109

Abstract

Summary form only given. This paper reports micro-Raman scattering investigations on GaInP/AlGaInP, GaAs/AlGaAs, and strained InGaAs/AlGaAs single quantum well (SQW) graded-index separate-confinement heterostructure ridge lasers. It demonstrates the potential and usefulness of Raman spectroscopy for optimizing the performance and reliability of laser diodes by measuring (i) local mirror temperatures, (ii) mechanical stress fields, (iii) mirror lattice disorder, and (iv) mirror coating stability under laser operation. Raman spectra have been measured in the backscattering geometry on the (110) facets of the 5-/spl mu/m-wide lasers by using the 457.9 nm Ar+ laser line with low powers of /spl sime/1 mW focused on a 1-/spl mu/m spot size. In this geometry only the transversal-optical (TO) phonon modes are allowed.

Keywords

Raman spectroscopy; laser mirrors; laser variables measurement; quantum well lasers; GaAs-AlGaAs; GaInP-AlGaInP; InGaAs-AlGaAs; Raman spectroscopy; SQW-GRIN-SCH laser; laser diode; mechanical stress field; micro-Raman scattering; mirror coating stability; mirror lattice disorder; mirror temperature; semiconductor laser; Geometrical optics; Laser modes; Laser stability; Mirrors; Particle scattering; Power lasers; Quantum well lasers; Raman scattering; Semiconductor lasers; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864428