Title :
Raman spectroscopy of semiconductor lasers
Author_Institution :
IBM Res. Div., Zurich Res. Lab., Ruschlikon, Switzerland
Abstract :
Summary form only given. This paper reports micro-Raman scattering investigations on GaInP/AlGaInP, GaAs/AlGaAs, and strained InGaAs/AlGaAs single quantum well (SQW) graded-index separate-confinement heterostructure ridge lasers. It demonstrates the potential and usefulness of Raman spectroscopy for optimizing the performance and reliability of laser diodes by measuring (i) local mirror temperatures, (ii) mechanical stress fields, (iii) mirror lattice disorder, and (iv) mirror coating stability under laser operation. Raman spectra have been measured in the backscattering geometry on the (110) facets of the 5-/spl mu/m-wide lasers by using the 457.9 nm Ar+ laser line with low powers of /spl sime/1 mW focused on a 1-/spl mu/m spot size. In this geometry only the transversal-optical (TO) phonon modes are allowed.
Keywords :
Raman spectroscopy; laser mirrors; laser variables measurement; quantum well lasers; GaAs-AlGaAs; GaInP-AlGaInP; InGaAs-AlGaAs; Raman spectroscopy; SQW-GRIN-SCH laser; laser diode; mechanical stress field; micro-Raman scattering; mirror coating stability; mirror lattice disorder; mirror temperature; semiconductor laser; Geometrical optics; Laser modes; Laser stability; Mirrors; Particle scattering; Power lasers; Quantum well lasers; Raman scattering; Semiconductor lasers; Spectroscopy;
Conference_Titel :
Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-443-2
