Title :
An inverted-gap analog tuning RF-MEMS capacitor with 250 milliwatts power handling capability
Author :
Barrière, F. ; Passerieux, D. ; Mardivirin, D. ; Pothier, A. ; Blondy, P.
Author_Institution :
XLIM, Limoges, France
fDate :
Jan. 29 2012-Feb. 2 2012
Abstract :
A novel analog tuning MEMS variable capacitor is presented. By using an inverted-gap configuration, the mechanical effects of large RF-signals can be cancelled. Fabricated devices could handle 250 mW of power, with measured 2.2:1 capacitance variation, very high Q, and extremely low parasitic series inductance up to 10 GHz.
Keywords :
capacitance; inductance; low-power electronics; micromechanical devices; varactors; RF-signals; analog tuning MEMS variable capacitor; capacitance variation; inverted-gap analog tuning RF-MEMS capacitor; low parasitic series inductance; power 250 mW; power handling capability; Micromechanical devices; Microwave theory and techniques; Radio frequency; Silicon compounds; Substrates; Varactors; Voltage measurement;
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2012 IEEE 25th International Conference on
Conference_Location :
Paris
Print_ISBN :
978-1-4673-0324-8
DOI :
10.1109/MEMSYS.2012.6170277
