• DocumentCode
    3547005
  • Title

    Modeling analysis and equivalent circuit realization of a flux-controlled memristor

  • Author

    Duo Xu ; Bocheng Bao

  • Author_Institution
    Sch. of Inf. Sci. & Technol., Univ. of Sci. & Technol. of China, Hefei, China
  • Volume
    2
  • fYear
    2013
  • fDate
    15-17 Nov. 2013
  • Firstpage
    495
  • Lastpage
    497
  • Abstract
    A new flux-controlled memristor model and its corresponding equivalent circuit are presented in this paper. The new memristor with a sinusoidal voltage stimulus typically has pinched hysteresis loop characteristics. Based on the equivalent circuit, the corresponding circuit simulations and experimental observations verify the theoretical results and shows that the proposed equivalent circuit does realize a flux-controlled memristor.
  • Keywords
    circuit simulation; equivalent circuits; magnetic flux; memristors; circuit simulations; equivalent circuit; flux-controlled memristor model; pinched hysteresis loop characteristics; sinusoidal voltage stimulus; Circuit simulation; Educational institutions; Equivalent circuits; Integrated circuit modeling; Memristors; Time-domain analysis; Video recording;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Communications, Circuits and Systems (ICCCAS), 2013 International Conference on
  • Conference_Location
    Chengdu
  • Print_ISBN
    978-1-4799-3050-0
  • Type

    conf

  • DOI
    10.1109/ICCCAS.2013.6765391
  • Filename
    6765391