DocumentCode
3547005
Title
Modeling analysis and equivalent circuit realization of a flux-controlled memristor
Author
Duo Xu ; Bocheng Bao
Author_Institution
Sch. of Inf. Sci. & Technol., Univ. of Sci. & Technol. of China, Hefei, China
Volume
2
fYear
2013
fDate
15-17 Nov. 2013
Firstpage
495
Lastpage
497
Abstract
A new flux-controlled memristor model and its corresponding equivalent circuit are presented in this paper. The new memristor with a sinusoidal voltage stimulus typically has pinched hysteresis loop characteristics. Based on the equivalent circuit, the corresponding circuit simulations and experimental observations verify the theoretical results and shows that the proposed equivalent circuit does realize a flux-controlled memristor.
Keywords
circuit simulation; equivalent circuits; magnetic flux; memristors; circuit simulations; equivalent circuit; flux-controlled memristor model; pinched hysteresis loop characteristics; sinusoidal voltage stimulus; Circuit simulation; Educational institutions; Equivalent circuits; Integrated circuit modeling; Memristors; Time-domain analysis; Video recording;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications, Circuits and Systems (ICCCAS), 2013 International Conference on
Conference_Location
Chengdu
Print_ISBN
978-1-4799-3050-0
Type
conf
DOI
10.1109/ICCCAS.2013.6765391
Filename
6765391
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