DocumentCode :
3547005
Title :
Modeling analysis and equivalent circuit realization of a flux-controlled memristor
Author :
Duo Xu ; Bocheng Bao
Author_Institution :
Sch. of Inf. Sci. & Technol., Univ. of Sci. & Technol. of China, Hefei, China
Volume :
2
fYear :
2013
fDate :
15-17 Nov. 2013
Firstpage :
495
Lastpage :
497
Abstract :
A new flux-controlled memristor model and its corresponding equivalent circuit are presented in this paper. The new memristor with a sinusoidal voltage stimulus typically has pinched hysteresis loop characteristics. Based on the equivalent circuit, the corresponding circuit simulations and experimental observations verify the theoretical results and shows that the proposed equivalent circuit does realize a flux-controlled memristor.
Keywords :
circuit simulation; equivalent circuits; magnetic flux; memristors; circuit simulations; equivalent circuit; flux-controlled memristor model; pinched hysteresis loop characteristics; sinusoidal voltage stimulus; Circuit simulation; Educational institutions; Equivalent circuits; Integrated circuit modeling; Memristors; Time-domain analysis; Video recording;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communications, Circuits and Systems (ICCCAS), 2013 International Conference on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4799-3050-0
Type :
conf
DOI :
10.1109/ICCCAS.2013.6765391
Filename :
6765391
Link To Document :
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