Title :
A physically-derived large-signal nonquasi-static MOSFET model for computer aided device and circuit simulation PART-I MOSFETs and CMOS inverters
Author :
Payton, Michael Walter ; Ho, Fat Duen
Author_Institution :
Dept. of Electr. & Comput. Eng., Alabama Univ., Huntsville, AL, USA
Abstract :
This paper presents a large-signal nonquasi-static model for the transient analysis of MOSFET devices and circuits. The nonquasi-static model is based on MOSFET device physics as opposed to empirical methodologies and is valid in all three regions of device operation: weak, moderate, and strong inversion. The nonquasi-static model is implemented within a CAD software package that provides for the numerical simulation of both individual MOSFET devices and CMOS logic circuits. The CAD software calculates the transient terminal currents and voltages of individual MOSFET devices while providing voltage transfer curves and switching speeds for the CMOS logic circuits. Results are compared with those obtained from SPICE Level 3 and SPICE Level 7 (BSIM 3.1) for a wide range of device geometries and circuit loading conditions. Good agreement has been achieved.
Keywords :
CMOS logic circuits; MOSFET; circuit CAD; circuit simulation; logic CAD; logic simulation; semiconductor device models; transient analysis; CAD software package; CMOS inverters; CMOS logic gate circuits; MOSFET circuit transient analysis; MOSFET device transient analysis; device moderate operation region; device weak operation; large-signal nonquasistatic MOSFET model; logic circuit switching speeds; physically-derived MOSFET model; strong inversion region; voltage transfer curves; CMOS logic circuits; Circuit simulation; Inverters; MOSFET circuits; Physics computing; SPICE; Semiconductor device modeling; Software packages; Transient analysis; Voltage;
Conference_Titel :
Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
Print_ISBN :
0-7803-8834-8
DOI :
10.1109/ISCAS.2005.1465546
