An MOCVD-grown, pseudomorphic InAsSb multiple quantum well injection laser emitting at 3.5 /spl mu/m

Author

Kurtz, Sarah R. ; Biefeld, R.M. ; Allerman, A.A. ; Howard, A.J. ; Crawford, M.H. ; Pelczynski, M.W.

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

fYear

1996

fDate

2-7 June 1996

Firstpage

169

Lastpage

170

Abstract

Summary form only given. The authors pseudomorphic multiple quantum well device displays the same characteristic temperature as InAsSb-InAlAsSb injection lasers, emitting at 3.9 /spl mu/m, which have been recently reported. Both the MOCVD and MBE devices are designed with comparable, small valence band offsets for the multiple quantum wells. This valence band offset controls hole confinement in the quantum well and affects the Auger rate.

Keywords

Auger effect; III-V semiconductors; birefringence; indium compounds; infrared sources; laser transitions; molecular beam epitaxial growth; quantum well lasers; semiconductor growth; valence bands; vapour phase epitaxial growth; 3.5 mum; 3.9 mum; Auger rate; InAsSb-InAlAsSb; InAsSb-InAlAsSb QW lasers; InAsSb-InAlAsSb injection lasers; MBE devices; MOCVD; MOCVD-grown; characteristic temperature; hole confinement; multiple quantum well device; multiple quantum wells; pseudomorphic InAsSb multiple quantum well injection laser; small valence band offsets; Biomedical measurements; Birefringence; Gas lasers; Heating; Laser transitions; Optical pulses; Polarization; Quantum well lasers; Tail; Tendons;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864518