Two-photon absorption coefficient and refractive-index changes in low-temperature-grown GaAs

Author

Luka, H.S. ; Benjamin, Seldon D. ; Smith, P.W.E.

Author_Institution

Dept. of Electr. Eng., Toronto Univ., Ont., Canada

fYear

1998

fDate

3-8 May 1998

Firstpage

536

Lastpage

537

Abstract

Summary form only given. We have measured a large two photon absorption (TPA) coefficient in LT-GaAs indicating that this material could be used to advantage in optical limiting and autocorrelation devices based on TPA. By using the refractive-index change and TPA coefficient dependence on growth and annealing temperatures, we can tailor the material to maximize the figures of merit for all optical switching devices.

Keywords

III-V semiconductors; absorption coefficients; gallium arsenide; optical correlation; optical limiters; optical switches; refractive index; semiconductor growth; GaAs; LT-GaAs; TPA coefficient; all optical switching devices; annealing temperatures; autocorrelation devices; figures of merit; growth temperatures; large two photon absorption coefficient; low-temperature-grown GaAs; optical limiting; refractive-index change; refractive-index changes; two-photon absorption coefficient; Absorption; Charge carrier lifetime; Doping; Electrons; Excitons; Gallium arsenide; Indium gallium arsenide; Materials science and technology; Temperature; Time factors;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-339-0

Type

conf

DOI

10.1109/CLEO.1998.676599

Filename

676599