High-speed formation of persistent gratings in doped semiconductors

Author

Redmond, I. ; Linke

Author_Institution

NEC Res. Inst., Princeton, NJ, USA

fYear

1996

fDate

2-7 June 1996

Firstpage

215

Lastpage

216

Abstract

Summary form only given. We describe time-resolved measurements of optical grating formation in Te-doped AlGaAs. Local refractive index modulation resulting from spatially selective ionization of defect sites known as "DX" centers produces holographic diffraction gratings with efficiencies above 10% for grating periods as small as 135 nm. These gratings are persistent for a duration that ranges from microseconds to many years depending on the sample temperature--the longer times being available only at cryogenic temperatures thus far.

Keywords

III-V semiconductors; aluminium compounds; crystal defects; gallium arsenide; high-speed optical techniques; holographic gratings; holographic storage; optical modulation; photorefractive materials; refractive index; 10 percent; 135 nm; AlGaAs:Te; DX centers; Te-doped AlGaAs; cryogenic temperatures; defect sites; doped semiconductors; grating periods; high-speed formation; holographic diffraction gratings; holographic storage; local refractive index modulation; optical grating formation; persistent gratings; sample temperature; spatially selective ionization; time-resolved measurements; Diffraction gratings; High speed optical techniques; Holographic optical components; Holography; Ionization; Optical diffraction; Optical modulation; Optical refraction; Optical variables control; Refractive index;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864581