Evaluation of CdZnTe detectors using crystals grown by the modified vertical bridgman technique

Author

Sturm, B.W. ; He, Z. ; Zurbucheru, T.H. ; Koehn, P.L.

Author_Institution

Michigan Univ., Ann Arbor, MI

Volume

7

fYear

2004

fDate

16-22 Oct. 2004

Firstpage

4420

Lastpage

4424

Abstract

The results of our newest depth sensing coplanar grid CdZnTe detectors will be discussed. These detectors, which utilize the third generation coplanar anode design, were fabricated by Baltic Scientific Instruments, Ltd., using crystals acquired from Yinnel Tech, Inc., having dimensions of 1.5 cmtimes1.5 cmtimes0.9 cm and 1.5 cmtimes1.5 cmtimes0.95 cm. Employing various compensation techniques, an energy resolution of about 1.7% FWHM was achieved for 662 keV gamma rays. The mu_etau_e for these crystals were measured and were found to be nonsymmetric for opposite electron drift directions. A study of the spectroscopic performance of CdZnTe for reduced temperature was implemented and we observed severely degraded performance for temperatures below -20 degC

Keywords

II-VI semiconductors; crystal growth from melt; electron mobility; gamma-ray detection; semiconductor counters; crystals growth; depth sensing coplanar grid CdZnTe detectors; electron drift directions; energy resolution; modified vertical Bridgman technique; spectroscopic performance; third generation coplanar anode design; Anodes; Crystals; Degradation; Detectors; Electrons; Energy resolution; Gamma rays; Instruments; Spectroscopy; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record, 2004 IEEE

Conference_Location

Rome

ISSN

1082-3654

Print_ISBN

0-7803-8700-7

Electronic_ISBN

1082-3654

Type

conf

DOI

10.1109/NSSMIC.2004.1466865

Filename

1466865