Laser beam induced dielectric cracks in VLSI devices

Author

Maury, Alvaro ; Schaller, John ; Lan, Goh Chia ; Yaacob, Iskandar Idris ; Meng, Chua Choon ; Huat, Tan Soon ; Maznev, Alexei ; Gomez, Kenneth

Author_Institution

Silterra (M) Sdn. Bhd., Kulim, Malaysia

fYear

2005

fDate

27 June-1 July 2005

Firstpage

9

Lastpage

13

Abstract

In this paper we first discuss details of the scanning optical microscope (SOM) used for TIVA analysis. Sample preparation and the effect of SRO deposition conditions on overall wafer stress are presented next. The use of surface acoustic wave (SAW) technique as discussed in M. Gostein et al. (2003), to calculate Young´s modulus of the SRO films is discussed. Dielectric cracking results for the different sample types are shown and finally, FE modeling of samples with low and high propensity to cracking is presented.

Keywords

VLSI; Young´s modulus; finite element analysis; integrated circuit modelling; laser beam effects; materials preparation; optical microscopes; thermal stress cracking; SRO deposition conditions; SRO films; TIVA analysis; VLSI devices; Young modulus; dielectric cracking; finite element modeling; laser beam induced dielectric cracks; sample preparation; scanning optical microscope; surface acoustic wave technique; thermally induced voltage alteration; wafer stress; Acoustic beams; Dielectric devices; Laser beams; Optical films; Optical microscopy; Optical surface waves; Stress; Surface acoustic wave devices; Surface cracks; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. Proceedings of the 12th International Symposium on the

Print_ISBN

0-7803-9301-5

Type

conf

DOI

10.1109/IPFA.2005.1469122

Filename

1469122