Tm/sup 3+/ materials for coherent transient optical memories and signal processors

Author

Wang, G.M. ; White, Gary A. ; Cone, R.L. ; Leask, M.J.M. ; Macfarlane, R.M. ; Hutcheson, R.L.

fYear

1996

fDate

2-7 June 1996

Firstpage

302

Abstract

Summary form only given. Demonstration of practical coherent transient-based optical signal processing and optically-addressed data storage using Tm/sup 3+/:YAG has stimulated a search for materials with better capabilities in the 790-nm region accessible by GaAlAs semiconductor lasers. These devices have the potential to increase optical storage densities by 10/sup 4/ or more and to provide GHz data rates.

Keywords

garnets; nonlinear optics; optical coherent transients; optical information processing; optical materials; optical storage; thulium; yttrium compounds; 790 nm; GHz data rates; GaAlAs; GaAlAs semiconductor lasers; Tm/sup 3+/ materials; Tm/sup 3+/:YAG; YAG:Tm; YAl5O12:Tm; coherent transient optical memories; coherent transient-based optical signal processing; nm region; optical signal processors; optical storage densities; optically-addressed data storage; Bandwidth; Crystals; Garnets; Optical devices; Optical materials; Optical signal processing; Semiconductor materials; Signal processing; Stimulated emission; Yttrium;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864705