Application of breakthrough failure analysis techniques on 90nm devices with an EOS fail

In this investigation, a combination of old and new FA techniques has been utilized in the analysis of EOS failure in 90nm devices. We illustrate how information from conventional techniques and new innovative techniques can lead to successful root cause analysis of the failure mechanism. One of the innovative techniques used in the study is spectral analysis using infrared emission microscope (REM). It is believed that failure mechanism such as gate oxide breakdown, hot carrier effects, leaky junctions, CMOS latch-up or other leakage failures have their own unique spectrum which can be used for "defect finger-printing" analysis as presented in H. Ishizuka et al. (1990), L. WB et al. (2003), M. Rasras et al. (1997) and M. Bailon et al. (2004). It is for this purpose that spectral analysis was used during the characterization of failure mechanism in this study. Other techniques utilized were circuit simulation and frontside and backside FA techniques to physically expose the defect in the failing region.