Title :
2D junction delineation for the failure analysis of silicon carbide devices
Author :
Buzzo, Marco ; Ciappa, Mauro ; Fichtner, Wolfgang
Author_Institution :
Infineon Technol., Villach, Austria
fDate :
27 June-1 July 2005
Abstract :
In this work the 2D dopant profile of a p+n-junction as measured with SCM is compared with the potential contrast maps obtained by scanning electron microscopy (SEM). Two samples prepared by cleaving and by polishing are investigated to quantify the impact of the surface roughness on the accuracy in delineating the junction location.
Keywords :
doping profiles; failure analysis; p-n junctions; scanning electron microscopy; semiconductor device testing; silicon compounds; surface roughness; wide band gap semiconductors; 2D dopant profile; 2D junction delineation; SiC; failure analysis; junction location; p+n-junction; potential contrast maps; scanning capacitance microscopy; scanning electron microscopy; silicon carbide device; surface roughness; Aluminum; Atomic force microscopy; Electron emission; Failure analysis; Nitrogen; Optical films; Rough surfaces; Scanning electron microscopy; Silicon carbide; Surface roughness;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. Proceedings of the 12th International Symposium on the
Print_ISBN :
0-7803-9301-5
DOI :
10.1109/IPFA.2005.1469140
