Gallium-lanthanum sulphide films for waveguide devices

Author

Asal, Rasool ; Rivers, P.E. ; Rutt, H.N.

Author_Institution

Dept. of Electron. & Comput. Sci., Southampton Univ., UK

fYear

1996

fDate

2-7 June 1996

Firstpage

303

Abstract

Summary form only given. We have constructed a novel laser ablation chamber dedicated to the production of Ga/sub 2/S/sub 3/-La/sub 2/S/sub 3/ (GLS) films. Sellmier equations and Urbach edge-absorption parameters have been deduced by detailed fitting to experimental data across the entire transparency range (0.6 /spl mu/m to 10 /spl mu/m) of the material. These parameters are required for device design and performance prediction.

Keywords

gallium compounds; infrared sources; lanthanum compounds; laser transitions; optical films; optical materials; optical waveguides; pulsed laser deposition; solid lasers; waveguide lasers; 0.6 to 10 mum; Ga/sub 2/S/sub 3/-La/sub 2/S/sub 3/; Ga/sub 2/S/sub 3/-La/sub 2/S/sub 3/ films; Sellmier equations; Urbach edge-absorption parameters; device design; experimental data; gallium-lanthanum sulphide films; laser ablation chamber; optical waveguide devices; optical waveguides; performance prediction; transparency range; Apertures; Gallium compounds; Glass; Optical films; Optical materials; Optical surface waves; Optical waveguides; Telescopes; Waveguide lasers; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864707