Investigation of CMOS devices with embedded SiGe source/drain on hybrid orientation substrates

Author

Ouyang, Qiqing ; Yang, Min ; Holt, Judson ; Panda, Siddhartha ; Chen, Huajie ; Utomo, Henry ; Fischetti, Massimo ; Rovedo, Nivo ; Li, Jinghong ; Klymko, Nancy ; Wildman, Horatio ; Kanarsky, Thomas ; Costrini, Greg ; Fried, David M. ; Bryant, Andres ; Ott,

Author_Institution

IBM T. J Watson Res. Center, Yorktown Heights, NY, USA

fYear

2005

fDate

14-16 June 2005

Firstpage

28

Lastpage

29

Abstract

CMOS devices with embedded SiGe source/drain for pFETs and tensile stressed liner for nFETs have been demonstrated for the first time on hybrid orientation substrates. Ring oscillators have also been fabricated. Significant performance improvement is observed in hybrid orientation substrates compared to (100) control substrates with embedded SiGe.

Keywords

CMOS integrated circuits; Ge-Si alloys; MOSFET; elemental semiconductors; epitaxial growth; etching; monolithic integrated circuits; oxidation; silicon-on-insulator; substrates; CMOS devices; SiGe; control substrates; embedded SiGe source-drain; hybrid orientation substrates; nFET; pFET; ring oscillator; tensile stressed liner; CMOS technology; Epitaxial growth; Etching; Germanium silicon alloys; Hybrid junctions; Phonons; Ring oscillators; Scanning electron microscopy; Silicon germanium; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on

Print_ISBN

4-900784-00-1

Type

conf

DOI

10.1109/.2005.1469199

Filename

1469199