Author :
Ouyang, Qiqing ; Yang, Min ; Holt, Judson ; Panda, Siddhartha ; Chen, Huajie ; Utomo, Henry ; Fischetti, Massimo ; Rovedo, Nivo ; Li, Jinghong ; Klymko, Nancy ; Wildman, Horatio ; Kanarsky, Thomas ; Costrini, Greg ; Fried, David M. ; Bryant, Andres ; Ott,
Author_Institution :
IBM T. J Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
CMOS devices with embedded SiGe source/drain for pFETs and tensile stressed liner for nFETs have been demonstrated for the first time on hybrid orientation substrates. Ring oscillators have also been fabricated. Significant performance improvement is observed in hybrid orientation substrates compared to (100) control substrates with embedded SiGe.
Keywords :
CMOS integrated circuits; Ge-Si alloys; MOSFET; elemental semiconductors; epitaxial growth; etching; monolithic integrated circuits; oxidation; silicon-on-insulator; substrates; CMOS devices; SiGe; control substrates; embedded SiGe source-drain; hybrid orientation substrates; nFET; pFET; ring oscillator; tensile stressed liner; CMOS technology; Epitaxial growth; Etching; Germanium silicon alloys; Hybrid junctions; Phonons; Ring oscillators; Scanning electron microscopy; Silicon germanium; Substrates;
