Title :
Integration of dual metal gate CMOS with TaSiN (NMOS) and Ru (PMOS) gate electrodes on HfO2 gate dielectric
Author :
Zhang, Z.B. ; Song, S.C. ; Huffman, C. ; Barnett, J. ; Moumen, N. ; Alshareef, H. ; Majhi, P. ; Hussain, M. ; Akbar, M.S. ; Sim, J.H. ; Bae, S.H. ; Sassman, B. ; Lee, B.H.
Author_Institution :
SEMATECH, Austin, TX, USA
Abstract :
We report the process module development results and device characteristics of dual metal gate CMOS with TaSiN and Ru gate electrodes on HfO2 gate dielectric. The wet etch of TaSiN had a minimal impact on HfO2 (ΔEOT<1Å). A plasma etch process has been developed to etch Ru/TaN/Poly (PMOS) and TaSiN/Ru/TaN/Poly (NMOS) gate stacks simultaneously. Well behaved dual metal gate CMOS transistors have been demonstrated with Lg down to 85nm.
Keywords :
CMOS integrated circuits; MIS structures; amorphous semiconductors; dielectric materials; electrodes; hafnium compounds; masks; nanotechnology; plasma deposited coatings; ruthenium; sputter etching; tantalum compounds; TaSiN-Ru-HfO2; device characteristics; dual metal gate CMOS transistors; gate dielectric; gate electrodes; gate stacks; plasma etch process; process module development; wet etch; CMOS process; Dielectric devices; Dry etching; Electrodes; Hafnium oxide; High-K gate dielectrics; MOS devices; Plasma applications; Tin; Wet etching;
Conference_Titel :
VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on
Print_ISBN :
4-900784-00-1
DOI :
10.1109/.2005.1469208
