Very high K and high density TiTaO MIM capacitors for analog and RF applications

Author

Chiang, K.C. ; Chin, Albert ; Lai, C.H. ; Chen, W.J. ; Cheng, C.F. ; Hung, B.F. ; Liao, C.C.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan

fYear

2005

fDate

14-16 June 2005

Firstpage

62

Lastpage

63

Abstract

For the first time, high density (10.3 fF/μm²), low voltage linearity (α=89 ppm/V²) and small leakage current (1.2×10^-82 A/cm² or 5.8 fA/[pF·V] at 2V) meet all the ITRS requirements of analog capacitor at year 2018. These are achieved by novel high-K TiTaO (K=45) and high work-function Ir capacitor, which further improve to very high 23 fF/μm² density and low 81 ppm/V² linearity for higher speed analog/RF ICs at 1GHz, using the fast α decay mechanism with increasing frequency.

Keywords

MIM devices; annealing; capacitors; leakage currents; plasma deposition; radiofrequency integrated circuits; tantalum compounds; titanium compounds; 1 GHz; ITRS requirements; MIM capacitors; TiTaO; analog capacitor; analog-RF IC; fast α-decay mechanism; high work function Ir capacitor; high-K dielectric; leakage current; low voltage linearity; Annealing; Capacitance; Crystallization; Electrodes; High K dielectric materials; High-K gate dielectrics; Leakage current; Linearity; MIM capacitors; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on

Print_ISBN

4-900784-00-1

Type

conf

DOI

10.1109/.2005.1469213

Filename

1469213