Title :
25% drive current improvement for p-type multiple gate FET (MuGFET) devices by the introduction of recessed Si0.8Ge0.2 in the source and drain regions
Author :
Verheyen, P. ; Collaert, N. ; Rooyackers, R. ; Loo, R. ; Shamiryan, D. ; De Keersgieter, A. ; Eneman, G. ; Leys, F. ; Dixit, A. ; Goodwin, M. ; Yim, Y.S. ; Caymax, M. ; De Meyer, K. ; Absil, P. ; Jurczak, M. ; Biesemans, S.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
This paper shows, for the first time, the successful introduction of recessed, strained Si0.8Ge0.2 in the source and drain regions of pMOS MuGFET devices, improving the on-state current of these devices by 25%, at a fixed off-state condition. The improvement is shown to be a combined effect of compressive stress introduced along the channel, and of a reduced series resistance.
Keywords :
Ge-Si alloys; MIS devices; MOSFET; contact resistance; Si0.8Ge0.2; drive current improvement; p-type multiple gate FET; pMOS MuGFET devices; Annealing; Capacitive sensors; Compressive stress; Contact resistance; Etching; FETs; Germanium silicon alloys; Instruments; MOS devices; Silicon germanium;
Conference_Titel :
VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on
Print_ISBN :
4-900784-00-1
DOI :
10.1109/.2005.1469264
