Title :
High performing 8 A EOT HfO2/TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown (SPER) junctions
Author :
Ragnarsson, L. Å ; Severi, S. ; Trojman, L. ; Brunco, D.P. ; Johnson, K.D. ; Delabie, A. ; Schram, T. ; Tsai, W. ; Groeseneken, G. ; De Meyer, K. ; De Gendt, S. ; Heyns, M.
Author_Institution :
IMEC, Hillsboro, OR, USA
Abstract :
We demonstrate high-performing w-channel transistors with a HfO2/TaN gate stack and a low thermal budget process (570°C anneal). The thinnest devices have an EOT of 8.3 A, a leakage current of 2.6 A/cm2 at VG=1 V, and a drive-current of 815 μA/um at an off-state current of 0.1 μA/μm for VDD=1.2 V. We show that the performance improvement over identical gate-stacks processed with a 1000°C spike anneal is related to a difference in VT.
Keywords :
MIS devices; annealing; dielectric materials; epitaxial growth; field effect transistors; hafnium compounds; leakage currents; semiconductor junctions; HfO2-TaN; drive current; gate stacks; high-performing w-channel transistors; leakage current; low thermal budget process; low thermal-budget n-channel FET; off-state current; solid-phase epitaxially regrown junction; Annealing; Capacitance-voltage characteristics; Capacitors; Dielectrics; FETs; Hafnium oxide; Implants; Leakage current; Permittivity; Temperature;
Conference_Titel :
VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on
Print_ISBN :
4-900784-00-1
DOI :
10.1109/.2005.1469281
