Title :
A novel voltage sensing 1T/2MTJ cell with resistance ratio for highly stable and scalable MRAM
Author :
Aoki, Masaki ; Iwasa, Hiroshi ; Sato, Yoshihiro
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
We propose a new scalable MRAM cell that consists of one transistor (IT) and two magnetic tunnel junctions (2MTJ), and can sense voltage directly divided with resistance ratio of 2MTJ. This circuit scheme enables to use folded bit line architecture with fixed reference voltage resulting into stable operation. The cell operations are demonstrated using SPICE simulations based on the measured characteristics of the series connected two magnetic tunnel junctions.
Keywords :
SPICE; electric sensing devices; magnetic tunnelling; magnetoresistive devices; random-access storage; MRAM; SPICE simulation; folded bit line architecture; magnetic tunnel junction; magnetoresistive random access memory; transistor; voltage sensing 1T/2MTJ cell; Circuit simulation; Clamps; Electrical resistance measurement; Laboratories; Magnetic tunneling; Nonvolatile memory; Random access memory; SPICE; Signal detection; Voltage;
Conference_Titel :
VLSI Circuits, 2005. Digest of Technical Papers. 2005 Symposium on
Print_ISBN :
4-900784-01-X
DOI :
10.1109/VLSIC.2005.1469359
