A 0.13 μm CMOS front-end for DCS1800/UMTS/802.11b-g with multi-band positive feedback low noise amplifier

Author

Liscidini, Antonio ; Brandolini, Massimo ; Sanzogni, Davide ; Castello, Rinaldo

Author_Institution

Univ. degli Studi di Pavia, Italy

fYear

2005

fDate

16-18 June 2005

Firstpage

406

Lastpage

409

Abstract

This paper presents a fully-integrated CMOS front-end based on a direct conversion architecture for UMTS/802.11b-g and a low-IF at 100kHz for DCS 1800. The two key building blocks are a multi-band low noise amplifier that uses positive feedback to improve its gain and a highly linear mixer. The front-end, integrated in 0.13μm CMOS process, exhibits a minimum noise figure of 5.2dB, a programmable gain that can be varied from 13.5dB to 28.5dB, an IIP3 of more than -7.5dBm and an IIP2 better than 50dBm. The total current consumption is 20mA from a 1.2 V supply.

Keywords

3G mobile communication; CMOS integrated circuits; IEEE standards; feedback; mixers (circuits); radio receivers; 0.13 micron; 1.2 V; 100 kHz; 13.5 to 28.5 dB; 20 mA; 5.2 dB; 802.11b-g; CMOS front-end; CMOS process; CMOS receiver; DCS1800; UMTS; direct conversion architecture; high linearity mixer; multiband positive feedback low noise amplifier; 3G mobile communication; Feedback; Hardware; Impedance matching; Linearity; Low-noise amplifiers; Noise figure; Radio frequency; Topology; Transceivers;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Circuits, 2005. Digest of Technical Papers. 2005 Symposium on

Print_ISBN

4-900784-01-X

Type

conf

DOI

10.1109/VLSIC.2005.1469415

Filename

1469415