Title :
A new method for on-wafer high frequency noise measurement of FETs
Author :
Dambrine, G. ; Cappy, A. ; Delos, E.
Author_Institution :
Univ. des Sci. et Techniques de Lille Flandres ARtois, Villeneuve d´´Ascq., France
Abstract :
A method for determining the equivalent noise resistance and the magnitude of the optimum generator admittance is described. This method is based on the fact that the real part of the correlation admittance can be neglected. It relies on the concept that the four noise parameters in the case of MESFETs and HEMTs (high-electron-mobility transistors) are not independent. A method for determining the noise parameters Gamma /sub opt/ and F/sub min/ without an automatic input tuner is proposed.<>
Keywords :
Schottky gate field effect transistors; electric noise measurement; high electron mobility transistors; microwave measurement; semiconductor device testing; solid-state microwave devices; HEMTs; MESFETs; automatic input tuner; correlation admittance; equivalent noise resistance; noise parameters; on-wafer high frequency noise measurement; optimum generator admittance; Admittance; FETs; Frequency; HEMTs; MESFETs; MODFETs; Noise generators; Noise measurement; Optimized production technology; Tuners;
Conference_Titel :
Microwave Symposium Digest, 1991., IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-87942-591-1
DOI :
10.1109/MWSYM.1991.146954
