A class of monolithic HBT multipliers

Author

Perry, C.B. ; Ip, K.T. ; Claxton, K.Z. ; Allen, B.R. ; Farris, A.E.

Author_Institution

TRW Inc., Redondo Beach, CA, USA

fYear

1991

fDate

10-14 July 1991

Firstpage

251

Abstract

Two types of monolithic multipliers have been developed using current AlGaAs HBT (heterojunction bipolar transistor) technology. Both circuits have an extended input frequency range of 10 MHz to 1.0 GHz. Preliminary wafer probe measurements indicate that the even-order multiplier achieves 45 dB of fundamental rejection and 22 dB conversion loss at 2.5 GHz (10th harmonic), consuming 175 mW. The odd-order multiplier exhibited 21 dB of conversion loss at 10 GHz (10th harmonic) and 35 dB at 21 GHz (21st harmonic), dissipating 315 mW. These circuits offer significant improvement in bandwidth and output power as well as lower implementation cost compared to existing diode-based MIC (microwave integrated circuit) or MMIC (monolithic microwave integrated circuit) MESFET frequency multipliers.<>

Keywords

III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; multiplying circuits; 10 GHz; 10 MHz to 1.0 GHz; 175 mW; 2.5 GHz; 21 GHz; 21 dB; 22 dB; 315 mW; 35 dB; AlGaAs; MMIC; bandwidth; conversion loss; even-order multiplier; extended input frequency range; fundamental rejection; implementation cost; monolithic HBT multipliers; odd-order multiplier; output power; wafer probe measurements; Bandwidth; Frequency; Heterojunction bipolar transistors; Loss measurement; MESFET integrated circuits; MMICs; Microwave integrated circuits; Monolithic integrated circuits; Power generation; Probes;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1991., IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-87942-591-1

Type

conf

DOI

10.1109/MWSYM.1991.146975

Filename

146975