Ultralow threshold current lasers

Author

Dapkus, P.D. ; MacDougal, M.H. ; Gye Mo Yang ; Chao-Kun Lin ; Uppal, Karan

Author_Institution

Nat. Center for Integrated Photonic Technol., Univ. of Southern California, Los Angeles, CA, USA

fYear

1996

fDate

2-7 June 1996

Firstpage

357

Lastpage

358

Abstract

Summary form only given. Ultralow threshold current vertical-cavity surface-emitting lasers (VCSELs) will enable practical laser-based smart pixels. Such devices have emerged through the application of monolithically integrated native oxides of AlGaAs as current constriction and mode control layers and as high-contrast Bragg reflectors. In this paper we will demonstrate and analyze the role of the oxide in current constriction and optical field control to predict the scaling of VCSELs to microamp thresholds. In addition, we will demonstrate and analyze the impact of high-contrast AlAs oxide/GaAs Bragg mirrors formed by selective oxidation on the performance of VCSELs and study the tradeoffs in device characteristics that arise from use of electrically insulating mirrors.

Keywords

laser mirrors; oxidation; semiconductor lasers; surface emitting lasers; AlAs-GaAs; AlGaAs; VCSEL; current constriction; electrically insulating mirror; high-contrast Bragg reflector; mode control; monolithically integrated native oxide; optical field control; selective oxidation; smart pixels; ultralow threshold current laser; vertical-cavity surface-emitting laser; Gallium arsenide; Laser modes; Mirrors; Optical control; Oxidation; Performance analysis; Smart pixels; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864785