A stable GaAs 6-20 GHz high gain and power TWA

Author

Oda, M.M.

Author_Institution

Hewlett-Packard, San Jose, CA, USA

fYear

1991

fDate

10-14 July 1991

Firstpage

437

Abstract

A stable power cascode distributed amplifier is demonstrated over the 6 to 20 GHz band. This monolithic GaAs traveling wave amplifier exhibits a minimum gain above 11 dB with +or-0.5 dB of gain flatness over the band. The output power at the 1 dB gain compression point is over 24 dBm at 20 GHz. The input/output return loss is better than 12 dB over the band. This chip was fabricated using a 0.4 mu m MESFET process and measures 3.02 mm*0.89 mm (area of 2.7 mm/sup 2/). This power wideband amplifier employs 7 cascode stages. The excellent performance is achieved with specially chosen transmission lines connecting the second gates and vias of each stage. This technique yields stability along with higher gain and power by eliminating the need for damping networks.<>

Keywords

III-V semiconductors; MMIC; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; microwave amplifiers; power amplifiers; wideband amplifiers; 0.4 micron; 11 dB; 12 dB; 3.02 mm; 6 to 20 GHz; GaAs; MESFET; cascode stages; damping networks elimination; gain; gain flatness; input/output return loss; output power; power cascode distributed amplifier; power wideband amplifier; semiconductors; transmission lines; traveling wave amplifier; Area measurement; Broadband amplifiers; Distributed amplifiers; Gain; Gallium arsenide; MESFETs; Power amplifiers; Power generation; Semiconductor device measurement; Transmission line measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1991., IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-87942-591-1

Type

conf

DOI

10.1109/MWSYM.1991.147029

Filename

147029